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| PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 03 -- 25 June 2003 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 (LFPAK) package. Product availability: PH3230 in SOT669 (LFPAK). 2. Features s s s s Logic level compatible Low drive current High density mounting Very low on-state resistance. 3. Applications s DC-to-DC converters s Computer motherboards s Switched mode power supplies. 4. Pinning information Table 1: Pin 1,2,3 4 mb Pinning - SOT669 (LFPAK), simplified outline and symbol Description source (s) mb Simplified outline Symbol d gate (g) mounting base, connected to drain (d) 1 2 3 4 MBL286 g Top view MBL288 s1 s2 s3 SOT669 (LFPAK) Philips Semiconductors PH3230 N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 C Tmb = 25 C Tmb = 25 C VGS = 10 V; ID = 25 A; Tj = 25 C VGS = 4.5 V; ID = 25 A; Tj = 25 C Typ 3.2 5.5 Max 30 50 42 150 3.7 7.3 Unit V A W C m m drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj ISM IDS(AL)R drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature peak source (diode forward) current Tmb = 25 C; pulsed; tp 10 s repetitive drain-source avalanche current Tj = 25 C Tj = 25 C; RGS 50 ; IDS(AL)R = 5 A; VDD = 15 V; duty cycle < 0.1%; Figure 3 and 16 VGS = 10 V; Tmb = 25 C; Figure 2 and 4 Tmb = 25 C; pulsed; tp 10 s; Figure 4 Tmb = 25 C; Figure 1 Conditions 25 C Tj 150 C Min -55 -55 Max 30 20 50 200 42 +150 +150 50 5 2.5 Unit V V A A W C C A A mJ Source-drain diode Avalanche ruggedness EDS(AL)R repetitive drain-source avalanche energy 9397 750 10949 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 03 -- 25 June 2003 2 of 13 Philips Semiconductors PH3230 N-channel enhancement mode field-effect transistor 120 03ah31 120 03ag77 Pder (%) 80 Ider (%) 80 40 40 0 0 50 100 150 200 Tmb (C) 0 0 50 100 150 200 Tmb (C) P tot P der = ---------------------- x 100% P tot ( 25 C ) VGS 10 V ID I der = ------------------ x 100% I D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 03aj93 4 EDS(AL)R (mJ) 3 2 1 0 0 50 100 Tj (C) 150 IAR = 5 A; VDD = 15 V; duty cycle < 0.1%; RG 50 Fig 3. Repetitive drain-source avalanche energy as a function of junction temperature. 9397 750 10949 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 03 -- 25 June 2003 3 of 13 Philips Semiconductors PH3230 N-channel enhancement mode field-effect transistor 103 03ag78 ID (A) Limit RDSon = VDS / ID 102 tp = 10 s 100 s 1 ms 10 DC 10 ms 100 ms 1 10-1 1 10 VDS (V) 102 Tmb = 25 C; IDM is single pulse. Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 10949 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 03 -- 25 June 2003 4 of 13 Philips Semiconductors PH3230 N-channel enhancement mode field-effect transistor 7. Thermal characteristics Table 4: Rth(j-mb) Thermal characteristics Conditions Min Typ Max Unit 3 K/W thermal resistance from junction to mounting base Figure 5 Symbol Parameter 7.1 Transient thermal impedance 10 03ag76 Zth(j-mb) (K/W) = 0.5 0.2 0.1 10-1 0.05 0.02 single pulse 10-2 10-5 tp t T P = tp T 1 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 10949 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 03 -- 25 June 2003 5 of 13 Philips Semiconductors PH3230 N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IGSS RDSon gate-source threshold voltage drain-source leakage current gate-source leakage current drain-source on-state resistance ID = 10 mA; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 10 VDS = 30 V; VGS = 0 V VGS = 16 V; VDS = 0 V VGS = 10 V; ID = 25 A; Figure 8 and 9 VGS = 4.5 V; ID = 25 A; Figure 9 Dynamic characteristics gfs Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD trr forward transconductance total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain (diode forward) voltage IS = 50 A; VGS = 0 V; Figure 14 reverse recovery time IS = 50 A; dIS/dt = -50 A/s; VGS = 0 V VDD = 10 V; ID = 25 A; VGS = 10 V; RG = 4.7 VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 13 VDS = 10 V; ID = 25 A; Figure 12 ID = 50 A; VDD = 10 V; VGS = 10 V; Figure 15 39 55 75 16 14 S nC nC nC pF pF pF ns ns ns ns V ns 30 1 1.9 0.1 3.2 5.5 2.5 1 10 3.7 7.3 V V A A m m Conditions Min Typ Max Unit 4750 1160 630 25 50 90 26 0.85 60 0.98 - Source-drain (reverse) diode 9397 750 10949 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 03 -- 25 June 2003 6 of 13 Philips Semiconductors PH3230 N-channel enhancement mode field-effect transistor 03ag79 100 ID (A) 80 10 V Tj = 25 C 5V 80 ID (A) 60 03ag80 VDS > ID x RDSon 4V 60 3.5 V 40 40 20 150 C VGS = 3 V 20 Tj = 25 C 0 0 0 1 2 3 4 5 VDS (V) 0 1 2 3 VGS (V) 4 Tj = 25 C Tj = 25 C and 150 C; VDS > ID x RDSon Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 30 RDSon (m) 20 03ag85 03ah32 1.8 a VGS = 2.5 V 3V 1.2 10 3.5 V 0.6 5V 10 V 0 0 20 40 ID (A) 60 0 -80 -20 40 100 T (C) 160 j Tj = 25 C R DSon a = --------------------------R DSon ( 25 C ) Fig 8. Drain-source on-state resistance as a function of drain current; typical values. Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature. 9397 750 10949 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 03 -- 25 June 2003 7 of 13 Philips Semiconductors PH3230 N-channel enhancement mode field-effect transistor 3 03ah33 VGS(th) (V) 2 max 10-1 ID (A) 10-2 03ah30 typ 10-3 10-4 1 min min. typ. max. 10-5 0 -80 -20 40 100 160 10-6 0 1 2 Tj (C) VGS (V) 3 ID = 1 mA; VDS = VGS Tj = 25 C Fig 10. Gate-source threshold voltage as a function of junction temperature Fig 11. Sub-threshold drain current as a function of gate-source voltage. 80 03ag81 104 03ag83 gfs (S) 60 VDS > ID x RDSon Tj = 25 C C (pF) Ciss 40 150 C 103 Coss Crss 20 0 0 20 40 60 ID (A) 80 102 10-1 1 10 VDS (V) 102 Tj = 25 C and 150 C; VDS > ID x RDSon VGS = 0 V; f = 1 MHz Fig 12. Forward transconductance as a function of drain current; typical values. Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 750 10949 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 03 -- 25 June 2003 8 of 13 Philips Semiconductors PH3230 N-channel enhancement mode field-effect transistor 03ag82 100 IS (A) 80 VGS = 0 V 10 VGS (V) 8 03ag84 ID = 50 A VDD = 10 V Tj = 25 C 60 6 150 C 40 4 Tj = 25 C 20 2 0 0 0 0.4 0.8 1.2 VSD (V) 1.6 0 20 40 60 QG (nC) 80 Tj = 25 C and 150 C; VGS = 0 V Tj = 25 C; ID = 50 A; VDD = 10 V Fig 14. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 15. Gate-source voltage as a function of gate charge; typical values. 9. Test information L VDS VGS 0 50 RG T.U.T. VDD -ID /100 R01 shunt 03am60 V ( BR )DSS E DS ( AL )R = 0.5 x ( LI DS ( AL )R ) 2 x --------------------------------------V ( BR )DSS - V DD Fig 16. Avalanche energy test circuit. 9397 750 10949 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 03 -- 25 June 2003 9 of 13 Philips Semiconductors PH3230 N-channel enhancement mode field-effect transistor 10. Package outline Plastic single-ended surface mounted package (Philips version LFPAK); 4 leads SOT669 E b2 L1 A c2 A2 C E1 mounting base D1 H D L2 1 e 2 3 b 1/2 e 4 X wMA c A A1 C (A 3) L detail X 0 2.5 scale 5 mm yC DIMENSIONS (mm are the original dimensions) UNIT mm A 1.20 1.01 A1 0.15 0.00 A2 1.10 0.95 A3 0.25 b 0.50 0.35 b2 4.41 3.62 c 0.25 0.19 c2 0.30 0.24 D(1) 4.10 3.80 D1(1) max 4.20 E(1) 5.0 4.8 E1(1) 3.3 3.1 e 1.27 H 6.2 5.8 L 0.85 0.40 L1 1.3 0.8 L2 1.3 0.8 w 0.25 y 0.1 8 0 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC MO-235 JEITA EUROPEAN PROJECTION ISSUE DATE 02-07-10 03-02-05 Fig 17. SOT669 (LFPAK). 9397 750 10949 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 03 -- 25 June 2003 10 of 13 Philips Semiconductors PH3230 N-channel enhancement mode field-effect transistor 11. Revision history Table 6: 03 Revision history CPCN Description Product Data (9397 750 10949) Modifications: Rev Date 20030625 * 02 01 20020905 20020207 - JEDEC reference added to package outline drawing in Figure 17 Product data (9397 750 10122) Product data (9397 750 09395) 9397 750 10949 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 03 -- 25 June 2003 11 of 13 Philips Semiconductors PH3230 N-channel enhancement mode field-effect transistor 12. Data sheet status Level I II Data sheet status[1] Objective data Preliminary data Product status[2][3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 14. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. 9397 750 10949 Fax: +31 40 27 24825 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 03 -- 25 June 2003 12 of 13 Philips Semiconductors PH3230 N-channel enhancement mode field-effect transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Transient thermal impedance . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 (c) Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 25 June 2003 Document order number: 9397 750 10949 |
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